发明名称 STATES ENCODING IN MULTI-BIT FLASH CELLS FOR OPTIMIZING ERROR RATE
摘要 Memory Cells are programmed and read (20), at least M=3 data bits per cell, according to a Valid nonserial physical bit ordering (22) with, reference to a logical bit ordering (24). The logical bit ordering is chosen to give a more even distribution of error probabilities of the bits, relative to the probability distributions of the data error and the cell state transition error, than would be provided by the physical bit ordering alone. Preferably, both bit Orderings have 2 M-1 transitions. Preferably, the logical bit ordering is evenly distributed. The translation between the bit orderings is done by software or hardware.
申请公布号 WO2006033099(A3) 申请公布日期 2007.05.18
申请号 WO2005IL01001 申请日期 2005.09.19
申请人 M-SYSTEMS FLASH DISK PIONEERS LTD.;LASSER, MENACHEM 发明人 LASSER, MENACHEM
分类号 G06F11/00;G11C11/34;G11C11/56;G11C16/04;G11C29/00;H03M13/00 主分类号 G06F11/00
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