| 摘要 |
A method to overcome a disadvantage that the signal charges decrease depending upon the storage time in a photo-electric conversion unit of a solid-state image pickup device. At the moment t<SUB>2 </SUB>when a prescribed exposure time (t<SUB>1</SUB>-t<SUB>2</SUB>) passes, the incident light is cut off by a cut off means such as a mechanical shutter of an interlace solid-state image pickup device. Then, at the time t<SUB>3</SUB>, a voltage VBsub is applied to N<SUP>-</SUP> semiconductor substrate 107 to raise up the potential barrier Deltaphi of the vertical OFD for the signal charges, whereby the leakage of the signal charges due to the self-induced drift, or the thermal diffusion is suppressed. Then, signal charges are read out from the odd lines at the time t<SUB>4, </SUB>and signal charges are read out from the even lines at the time t<SUB>5</SUB>.
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