发明名称 |
Methods of forming silicon quantum dots and methods of fabricating semiconductor memory device using the same |
摘要 |
The disclosure provides methods of forming a silicon quantum dots for application in a semiconductor memory device. One example method includes sequentially forming a pad oxide film and a sacrificial insulation film on a silicon substrate; forming a wall layer by selectively etching the sacrificial insulation film; forming a spacer at the side wall of the wall layer; etching the silicon substrate as much as a predetermined thickness using the spacer as a mask, thereby forming a silicon pattern; forming a barrier film for burying the upper surface and the side surface of the silicon pattern; applying isotropic etching to the substrate using the barrier film as a mask; and oxidizing the isotropic etched substrate with thermal treatment.
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申请公布号 |
US7217620(B2) |
申请公布日期 |
2007.05.15 |
申请号 |
US20040027516 |
申请日期 |
2004.12.30 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
KOH KWAN-JU |
分类号 |
H01L21/336;H01L21/8247;H01L21/28;H01L27/115;H01L29/12;H01L29/423;H01L29/775;H01L29/788;H01L29/792 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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