| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface inspection method capable of detecting quickly and precisely an unevenness on a sample surface. SOLUTION: This surface inspection method for inspecting a surface state of a wafer includes an irradiation process for emitting light from a prescribed position in a DMD 4 to irradiate the surface of the wafer W at a prescribed irradiation aperture angle, an image-focusing process for image-focusing reflected light on the surface of the wafer W by a telecentric optical system having an optical axis extended along a normal direction on the surface of the wafer W, a brightness data collecting process for picking up an image-focused image and for collecting a brightness data in each point on the surface of the wafer W, and a regulation process for changing an incident angle of the light to the each point on the surface of the wafer W and a reflection angle of the light from the each point, by switching a position of a mirror for projecting the light in the DMD 4, based on the brightness data, and for controlling the reflected light taken into a diaphragm 12 of the telecentric optical system to regulate sensitivity of the picked-up image. COPYRIGHT: (C)2007,JPO&INPIT |
