Method of fabricating a microelectronic device using electron beam treatment to induce stress

摘要

The present invention, in one embodiment, provides a method of fabricating a microelectronics device 200 . This embodiment comprises forming a liner 310 over a substrate 210 and a gate structure 230 , subjecting the liner 310 to an electron beam 405 and depositing a pre-metal dielectric layer 415 over the liner 310.