| 摘要 |
PROBLEM TO BE SOLVED: To provide a 2-wavelength semiconductor laser light emitting device 1 of an infrared laser light emitting element 3 having a lower cladding layer 3a, an active layer 3b, and an upper cladding layer 3c for infrared ray laminated on the upper surface of a single substrate 2; and a red laser light emitting element 4 having a lower cladding layer 4a, an active layer 4b, and an upper cladding layer 4c for red ray laminated on the same substrate, with the elements 3 and 4 arranged side by side wherein the heights of the active layers 3b and 4b for infrared and red rays are made nearly the same without increasing the thickness of the red-ray lower cladding layer 4a. SOLUTION: An etching stop layer 3a' is provided in the middle of the lower cladding layer 3a for infrared ray in its thickness direction, a part of the lower cladding layer 3a for infrared ray provided at the upper side of the etching stop layer 3a' is removed by etching at the part of the red laser light emitting element 4, and the red laser light emitting element 4 is provided at the removed part. COPYRIGHT: (C)2007,JPO&INPIT
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