发明名称 |
Switching circuit and semicondcutor device |
摘要 |
An RF switching circuit according to the present invention includes: a plurality of input/output terminals for inputting and outputting an RF signal; and a switch for opening and closing an electrical connection between the input/output terminals. The switch is constituted by a multi-gate field effect transistor including a plurality of gates located between source and drain spaced from each other on a semiconductor layer. A bias voltage is applied to an inter-gate region of the semiconductor layer between the gates. The bias voltage is equal to or lower than 90% of a high-level voltage, which is a voltage for turning the multi-gate field effect transistor ON, in a state where the multi-gate field effect transistor is ON, and is equal to or higher than 80% of the high-level voltage and equal to or lower than the high-level voltage in a state where the multi-gate field effect transistor is OFF.
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申请公布号 |
US2007102730(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20060646413 |
申请日期 |
2006.12.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAKATSUKA TADAYOSHI;FUKUMOTO SHINJI |
分类号 |
H01L27/04;H01L27/10;H01L21/822;H01L27/088;H01L27/095;H01L29/74;H01L29/80;H03K17/62;H03K17/687;H03K17/693 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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