发明名称 |
Deposition systems and susceptor assemblies for depositing a film on a substrate |
摘要 |
Parasitic deposits are controlled in a deposition system for depositing a film on a substrate, the deposition system of the type defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber. Such control is provided by flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surface and components of the process gas. A deposition system for depositing a film on a substrate using a process gas includes a reaction chamber adapted to receive the substrate and the process gas. The system further includes an interior surface contiguous with the reaction chamber. A buffer gas supply system is adapted to supply a flow of a buffer gas between the interior surface and at least a portion of the process gas such that the flow of the buffer gas forms a gas barrier layer to inhibit contact between the interior surface and components of the process gas when the process gas is disposed in the reaction chamber.
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申请公布号 |
US2007101939(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20060512800 |
申请日期 |
2006.08.29 |
申请人 |
CREE, INC. |
发明人 |
SUMAKERIS JOSEPH J.;PAISLEY MICHAEL J.;O'LOUGHLIN MICHAEL J. |
分类号 |
C23C16/00;C23C16/44;C23C16/455 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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