| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem of a crack which is produced when an oxide film is formed at an ambient pressure or a pressure close to the ambient pressure; and thereby to provide a method for forming an oxide film having superior insulation characteristics and high productivity. SOLUTION: The method for forming the oxide film on a substrate by using an ambient pressure plasma CVD technique includes repeating the step (A) of supplying a gas of an organometallic compound containing a metallic component of the oxide film and a working gas mainly containing oxygen which generates plasma and becomes a film component, and the step (B) of stopping supplying the gas of the organometallic compound and supplying only the working gas. The method for forming the oxide film can control an amount of C in the oxide film formed on the substrate into 2% or less by atomic weight, by repeating the step (A) and the step (B). COPYRIGHT: (C)2007,JPO&INPIT
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