发明名称 |
Feedback control of chemical mechanical polishing device providing manipulation of removal rate profiles |
摘要 |
A method of controlling surface non-uniformity of a wafer in a polishing operation includes (a) providing a model for a wafer polishing that defines a plurality of regions on a wafer and identifies a wafer material removal rate in a polishing step of a polishing process for each of the regions, wherein the polishing process comprises a plurality of polishing steps, (b) polishing a wafer using a first polishing recipe based upon an incoming wafer thickness profile, (c) determining a wafer thickness profile for the post-polished wafer of step (b), and (d) calculating an updated polishing recipe based upon the wafer thickness profile of step (c) and the model of step (a) to maintain a target wafer thickness profile. The model can information about the tool state to improve the model quality. The method can be used to provide feedback to a plurality of platen stations.
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申请公布号 |
US2007102116(A1) |
申请公布日期 |
2007.05.10 |
申请号 |
US20060645989 |
申请日期 |
2006.12.27 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
SHANMUGASUNDRAM ARULKUMAR P.;SCHWARM ALEXANDER T.;PRABHU GOPALAKRISHNA B. |
分类号 |
B24B49/02;G06F19/00;B24B37/04;B24B49/03;B24B49/04;B24B49/18;G05B19/00;G05B19/19;G05B19/418;H01L21/00;H01L21/304;H01L21/306;H01L21/3105;H01L21/66 |
主分类号 |
B24B49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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