| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a wiring width of 0.25μm by using a production device for manufacturing the semiconductor device having the wiring width of 0.35μm, by preventing the generation of voids in interlayer insulating films among metallic wirings. SOLUTION: A conductive film 20 is formed on a foundation 10, and silicon oxide films 30 are formed on the conductive film 20. First metallic wiring masks 40 having a width of 0.35μm are formed on the silicon oxide film by a photolithographic method using an i-ray exposure machine. The silicon oxide film is worked by a CF<SB>4</SB>/O<SB>2</SB>plasma etching to form hard masks 32, while the first metallic wiring masks are worked and changed into second metallic wiring masks 42 having the width of 0.25μm. The conductive film is worked by an etching using the hard masks and the second metallic wiring masks to form metallic wirings 28. The interlayer insulating films are formed by a plasma CVD (Chemical Vapor Deposition) method so as to bury the hard masks and the metallic wirings on the foundation. COPYRIGHT: (C)2007,JPO&INPIT
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