发明名称 SUBSTRATE GROUND-DIRECT TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma treatment method capable of carrying out plasma treatment, using a simple device structure. <P>SOLUTION: In a first step, a treating object 10 having conductivity is arranged, facing a dielectric 24 covering the surface of an HOT electrode 22 that impresses voltage. In a second step, a treatment gas is supplied to the space 25 between the dielectric 24 and the treating object 10. In a third step, voltage is impressed on the HOT electrode 22, electric discharge is generated between the HOT electrode 22 and the treating object 10, and the treating gas which becomes plasmatic by discharge is made to contact the surface 11 of the treating object 10, and the surface 11 of the treating object 10 is plasma-treated. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007115616(A) 申请公布日期 2007.05.10
申请号 JP20050308375 申请日期 2005.10.24
申请人 SEKISUI CHEM CO LTD 发明人 IWANE KAZUYOSHI
分类号 H05H1/24;B08B7/00;C23C16/503;C23F4/00;H01L21/3065 主分类号 H05H1/24
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