| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor storage device suppressing a writing disturbance phenomenon with respect to an adjacent non-selection memory cell adjacent to a selected selection memory cell in a writing operation. <P>SOLUTION: The non-volatile semiconductor storage device is provided with a memory cell array, where a plurality of non-volatile memory cells with MOSFET structures having charge holders accumulating a charge formed on a semiconductor substrate through an insulating film are arranged in a row direction and a column direction; control gates of the memory cells in the same row are mutually connected, and it is set to be a common word line extending in the row direction; diffusion regions forming drains or sources of the memory cells in the same column are mutually connected; and it is constituted as a common bit line extending in the column direction; which is formed of diffusion wiring. A shielding body 9 formed of a conductor or a conductive semiconductor is formed between the charge holders of the memory cells adjacent in the row direction. The upper end of the shielding body is positioned upper than an upper face of the semiconductor substrate 1. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
