摘要 |
An semiconductor device ( 1 ) of the invention includes a semiconductor substrate provided with a channel region ( 21 ), a source region ( 22 ) and a drain region ( 23 ), a gate insulating film ( 3 ) laminated on the channel region ( 21 ), and a gate electrode ( 5 ). The gate insulating film ( 3 ) is formed of an insulative inorganic material as a main material, and further contains hydrogen. The absorbance of infrared radiation of which wave number is in the range of 3200 to 3500 cm<SUP>-1 </SUP>is 0.02 or less when the gate insulating film ( 3 ) to which an electric field has never been applied is measured with Fourier Transform Infrared Spectroscopy at room temperature.
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