| 摘要 |
SRAM cell includes a four-terminal diode as a read device wherein the first terminal is connected to a read word line, the second terminal is connected to a storage device through a resistor, the third terminal is floating, and the fourth terminal is connected to one of two bit lines; and two MOS transistors as a write device; and each MOS transistor is connected to the bit line respectively; and a latch including two cross-coupled inverters as the storage device; and the SRAM cell can be formed from thin-film layer, thus multiple memory cells are stacked; and the heavy routing lines are driven by the bipolar drivers which are part of the invention, hence the bipolar circuits and the control MOS transistors of the peripheral circuit can be formed from the deposited thin-film layers; consequently the whole chip can be stacked over the wafer, such as silicon, quartz and others; additionally it applications are extended to a multi port memory and a content addressable memory.
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