HEAT TREATMENT METHOD

摘要

PROBLEM TO BE SOLVED: To perform instantaneous heat treatment of a semiconductor or a semiconductor device while improving energy consumption due to light energy loss. SOLUTION: On a heat treatment article, a light absorption layer 5 comprising carbon or principally comprising carbon and a transparent antireflection layer 6 are formed. Pulse light is irradiated from the antireflection layer side and the pulse light is absorbed by the light absorption layer. Heat is generated from the light absorption layer with the energy of absorbed pulse light and the heat treatment article is heat treated instantaneously with heat generated from the light absorption layer. COPYRIGHT: (C)2007,JPO&INPIT