3-5 Group compound semiconductor and light emitting device

摘要

Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1x10<17 >cm<-> or more and 1x10<21 >cm<-3 >or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.