| 摘要 |
The arrangement (100) has a metal-oxide-semiconductor FET (MOSFET) with a gate-electrode, source electrode and a drain electrode in a driving circuit (102). A diode arrangement has a zener diode with an inverse polarity protection device between a base electrode (321) and a collector electrode (323) of pnp transistors for limiting voltage between the gate electrode and the source electrode of the FET. A capacitor (350) is provided for producing another voltage between the base electrode and collector electrode of the pnp transistors. An independent claim is also included for a method for galvanic separate controlling of a semiconductor switch. |
