| 摘要 |
<p>The invention is intended for measurement of a semiconductor photoelectric properties by optical means and, thus, can be used for contact less characterization of semiconductor crystals, structures, or evaluation of their fabrication technology. A holographic method for determination of photoelectric parameters of a semiconductor uses for optical excitation two beams with identical wave fronts that are created by an optical mask, monitors the light-induced spatially-modulated structure within the investigated semiconductor by optical probe pulse, measures the diffraction characteristics of the probe beam which diffracts on the structure, and determines the photoelectric parameters of a semiconductor from the diffraction characteristics. A holographic device for determination of photoelectric parameters of a semiconductor employs a diffraction grating and beam-aligning elements positioned in the optical excitation channels, variable delay line for the probe beam, and set of detectors to monitor cha</p> |
