发明名称 PHOTODIODE ARRAY AND PRODUCTION METHOD THEREOF, AND RADIATION DETECTOR
摘要 <p>A photodiode array 1 is provided with an n-type silicon substrate 3. A plurality of photodiodes 4 are formed in array on the opposite surface side to an incident surface of light L to be detected, in the n-type silicon substrate 3. A resin film 6 for transmitting the light L to be detected is provided so as to cover at least regions corresponding to regions where the photodiodes 4 are formed, on the incident surface side of the light L to be detected, in the n-type silicon substrate 3. <IMAGE></p>
申请公布号 EP1608022(A4) 申请公布日期 2007.05.09
申请号 EP20040723382 申请日期 2004.03.25
申请人 HAMAMATSU PHOTONICS K.K. 发明人 SHIBAYAMA, KATSUMI
分类号 G01T1/20;H01L27/14;H01L27/144;H01L27/146;H01L31/09;H01L31/115;(IPC1-7):H01L27/146;H01L31/10 主分类号 G01T1/20
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