摘要 |
<p>A semiconductor light detecting device has a light absorbing layer; and a pn junction, carriers generated by the light absorbing layer absorbing the light in a light detecting region being detected as a photoelectric current through a depletion layer provided by applying a backward voltage to the pn junction, wherein the light detecting region in the light absorbing layer is all depleted in a state where an operating voltage is applied.
</p> |