| 摘要 |
A semiconductor device includes a semiconductor substrate, at least two gate electrode sections formed adjacent to each other on the surface of the semiconductor substrate, a first diffusion region formed in the surface area of the semiconductor substrate, except in the gate electrode sections, a substrate contact layer formed between the gate electrode sections in self-alignment therewith, a first side-wall insulating film formed on one of side-wall portions of each of the gate electrode sections, and a second side-wall insulating film formed on other of the side-wall portions of each of the gate electrode sections. The device further includes a second diffusion region whose conductivity type is opposite to that of the first diffusion region, formed in the surface area of the semiconductor substrate and corresponding to each of the edges of the gate electrode sections, the edges corresponding to the other of the side-wall portions.
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