发明名称 Semiconductor chip having metal lead and manufacturing method thereof
摘要 <p>PURPOSE: A semiconductor chip is provided to overcome a height limit of a bump for flip chip bonding and to draw a high reliable bonding function by a spring effect and a cost saving effect. CONSTITUTION: An electrode pad is formed on a passivating face of a semiconductor chip(10) on which an integrated circuit is formed. A passivation film(13) and a polyimide film(15) are formed on a surface of the passivating face to protect the face from exterior environment. A metal lead(31) is formed on the electrode pad in a predetermined height with a slant angle to the electrode pad. The metal lead consists of a metal lead base(27) and a metal lead plating layer(29). The semiconductor chip is flip chip bonded to a printed circuit board(40) by bonding the metal lead to a bonding pad(41) of the printed circuit board. An opening is formed on entire surface of the semiconductor chip to open the electrode pad part. The first photo resist film is formed so that the opened part is tilted. The second photo resist film is formed to cover a metal layer formed on entire surface of the first photo resist film.</p>
申请公布号 KR100715969(B1) 申请公布日期 2007.05.08
申请号 KR20000008161 申请日期 2000.02.21
申请人 发明人
分类号 H01L23/498 主分类号 H01L23/498
代理机构 代理人
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