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发明名称
奈米点记忆体及其制法
摘要
本发明揭示一种奈米点记忆体及其制法,系藉由将胶体状态的金属奈米点胶体溶液涂敷于基板上,藉此将数奈米大小的奈米点颗粒均匀排列于基板上所形成,以增加记忆体积集度。于制法中,在基板表面上形成第一绝缘膜,将金属奈米点胶体溶液涂敷于第一绝缘膜上,使胶体溶液内的溶剂挥发,形成奈米点颗粒层,再于基板露出奈米点颗粒的表面上形成第二绝缘膜。调整胶体溶液的金属奈米点颗粒浓度,可使奈米点颗粒形成单层结构。使用旋涂方法将胶体溶液涂敷于基板上以形成均匀排列的单层奈米点颗粒,可轻易制得具有奈米点结构的奈米点记忆体。
申请公布号
TW200717622
申请公布日期
2007.05.01
申请号
TW095132361
申请日期
2006.09.01
申请人
三星电子股份有限公司
发明人
薛光洙;赵庆相;金丙基;李恩惠;崔在营
分类号
H01L21/28(2006.01);H01L29/788(2006.01)
主分类号
H01L21/28(2006.01)
代理机构
代理人
许锺迪
主权项
地址
韩国
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