发明名称 Top layers of metal for high performance IC's
摘要 A barrier layer is deposited over a layer of passivation including in an opening to a contact pad created in the layer of passivation. A column of three layers of metal is formed overlying the barrier layer and aligned with the contact pad and having a diameter that is about equal to the surface of the contact pad. The three metal layers of the column comprise, in succession when proceeding from the layer that is in contact with the barrier layer, a layer of pillar metal, a layer of under bump metal and a layer of solder metal. The layer of pillar metal is reduced in diameter, the barrier layer is selectively removed from the surface of the layer of passivation after which reflowing of the solder metal completes the solder bump of the invention.
申请公布号 US2008050909(A1) 申请公布日期 2008.02.28
申请号 US20070930682 申请日期 2007.10.31
申请人 MEGICA CORPORATION 发明人 LIN MOU-SHIUNG;LEE JIN-YUAN
分类号 H01L21/4763;H01L21/02;H01L21/44;H01L21/50;H01L21/768;H01L23/52;H01L23/522;H01L23/525;H01L23/528;H01L23/532;H01L23/60;H01L27/06;H01L27/08 主分类号 H01L21/4763
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