发明名称 |
Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate |
摘要 |
The present invention provides an active matrix substrate which can be fabricated at a lower cost and a light emitting device having a large display area fabricated by a vapor deposition system which makes a film with uniform thickness for a large substrate. According to the invention, an organic light-emitting device can be fabricated by performing vapor deposition toward a large substrate provided with a pixel portion (and a driver circuit) including an n-channel TFT having a amorphous silicon film, semi-amorphous semiconductor film or an organic semiconductor film as an active layer.
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申请公布号 |
US7211454(B2) |
申请公布日期 |
2007.05.01 |
申请号 |
US20040894434 |
申请日期 |
2004.07.20 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;IMAI KEITARO;MAEKAWA SHINJI;FURUNO MAKOTO;NAKAMURA OSAMU;MURAKAMI MASAKAZU |
分类号 |
H01L21/00;B05D5/06;B05D5/12;H01L21/44;H01L21/84;H01L27/32;H01L51/40;H01L51/56 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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