| 摘要 |
Example embodiments of the present invention relate to an interposer of a semiconductor device having an air gap structure, a semiconductor device using the interposer, a multi-chip package using the interposer and methods of forming the interposer. The interposer includes a semiconductor substrate including a void, a metal interconnect, provided within the void, thereby forming an air gap insulating the metal interconnect. The metal interconnect may be connected to a contact element, and may be maintained within the air gap using the contact element. |
