| 摘要 |
The invention relates to a method for vacuum deposition of at least one thin layer made from boron on a substrate, characterised in that at least one type of atomisation either chemically inactive or active with regard to boron is/are selected, a collimated ion beam is generated by means of at least one linear ion source positioned in an industrial scale unit said beam mainly comprising the atomisation species, the beam is directed towards at least one target made from boron, at least one surface section of said substrate is placed facing the target such that the material atomised by the ion bombardment of the target or a material resulting from the reaction of said atomised material with at least one of the atomising species is deposited on said surface section.
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