发明名称 |
Semiconductor substrate for producing semiconductor component, includes monocrystalline material having crystal structure compressed in areas with extrinsic, permanent curvature |
摘要 |
A semiconductor substrate (8) comprises a monocrystalline material having a crystal structure K; and having areas with an extrinsic, permanent curvature, and the crystal structure K being compressed and/or widened and/or distorted in these areas. The monocrystalline material has a diamond structure, or a zinc blend structure. The monocrystalline material comprises silicon. Independent claims are included for: (1) a semiconductor chip (2); (2) a semiconductor component (1); and (3) a method for production of a semiconductor component. |
申请公布号 |
DE102005051332(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
DE20051051332 |
申请日期 |
2005.10.25 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
THEUSS, HORST |
分类号 |
H01L29/04;H01L21/20;H01L21/50;H01L23/498;H01L23/50 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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