| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To prove a nonvolatile semiconductor storage device which is capable of reducing power consumption at reading time. <P>SOLUTION: When memory data of a memory cell transistor M of a memory cell array 11 is defined by a binary of logical "1" and logical "0", threshold voltage of the memory cell transistor which memorizes the logical "1" is set lower than the ground voltage, meanwhile the threshold voltage of the memory cell transistor M which memorizes the logical "0" is set higher than the ground voltage and at single power source voltage Vcc of external input or below. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
