发明名称 |
STRUCTURE AND METHOD FOR MANUFACTURING HIGH PERFORMANCE AND LOW LEAKAGE FIELD EFFECT TRANSISTOR |
摘要 |
There is provided a field effect transistor (FET) including a source side semiconductor; a drain side semiconductor; and a gate. The source side semiconductor is made of a high mobility semiconductor material, and the drain side semiconductor is made of a low leakage semiconductor material. In one embodiment, the FET is a Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). There is also provided a method for manufacturing the FET.
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申请公布号 |
US2007090406(A1) |
申请公布日期 |
2007.04.26 |
申请号 |
US20050163647 |
申请日期 |
2005.10.26 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ZHU HUILONG;CHENG KANGGUO |
分类号 |
H01L29/76;H01L29/745 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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