| 摘要 |
The present invention relates to an exposure method for forming an interference fringe and a method for forming an interference pattern on a photoresist material. The exposure method utilizes using the photoresist exposed in a first exposure procedure as a second mask in a second exposure procedure, so as to allow the light beam of the second exposure to generate interference fringes together with a physical mask. Thereby, the number of the masks is reduced, and the interference fringes can be easily controlled.
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