| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma etching method wherein, when the etching is judged to be abnormal and the plasma generation is once stopped, charged reaction products floating in the plasma are prevented from sticking strongly to the surface of a processed object, and when the etching is again performed continuously so-called etching residue defects are not generated. SOLUTION: In the stopping method of the plasma etching, its high-frequency power is reduced from 2,100 W to 1,400 W as the first stage and kept at 1,400 W for 0.3 sec. Thereafter, its high-frequency power is reduced further to 700 W as the second stage and kept at 700 W for 0.3 sec. Finally, its high-frequency power is reduced to 0 W as the third stage. That is, its stopping method involves reducing its high-frequency power of 2,100 W by equal dividing it into the three stages. COPYRIGHT: (C)2007,JPO&INPIT
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