| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor whose manufacturing process is simplified and reduced in cost but which is provided with excellent ON/OFF characteristics, mobility and conductivity under a low-off current low in interface ranking, by employing the same material for the formation of a semiconductor active layer and a gate insulating film. SOLUTION: Upon manufacturing the gate insulating film and the semiconductor layer by the same spatter target, the flow rate of oxygen in spatter gas is controlled whereby the semiconductor layer having a conductivity of not less than 1×10<SP>-10</SP>S/cm and not more than 1×10<SP>-2</SP>S/cm, and the gate insulating film having the conductivity of not more than 10<SP>-11</SP>S/cm, can be formed in the same vacuum tank while evacuation upon forming the semiconductor layer and the gate insulating film can be carried out by one time whereby the transistor can be manufactured at a low cost. COPYRIGHT: (C)2007,JPO&INPIT
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