| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for preventing occurrence of excessive silicide formation on a diffused layer of a MOSFET in a semiconductor device provided with a ferroelectric capacitor, and the MOSFET having the diffused layer provided with a silicide layer. SOLUTION: The semiconductor device is provided with a semiconductor layer in which an element forming region is set; a field oxide film which is formed around the element forming region of the semiconductor layer and insulatingly separates between the element forming regions adjacent to each other; the MOSFET which is formed on the semiconductor layer in the element forming region and has the diffused layer provided with the silicide layer, the ferroelectric capacitor formed by laminating a lower electrode, a ferroelectric substance, and an upper electrode on the field oxide film in turn; and a cover insulating film covering the ferroelectric capacitor, and connected to the field oxide film. COPYRIGHT: (C)2007,JPO&INPIT
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