| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching a TiW underbump layer causing no undercut, regardless of wet-type etching with a chemical liquid. SOLUTION: In a region where no gold bump electrode 3 is present, a chemical liquid Y (hydrogen peroxide solution) is not activated under irradiation of UV excimer light, resulting in prompt etching reaction of a TiW underbump layer 2a. In a region where the gold bump electrode 3 is present, no chemical liquid Y is activated as the UV excimer light is blocked by the gold bump electrode, resulting in little etching reaction. In short, since the etching reaction of the TiW underbump layer 2a is very slow in the lower region of the gold bump electrode 3, etching of the TiW underbump layer 2a with no under cut generated is realized. COPYRIGHT: (C)2007,JPO&INPIT
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