MASK BLANK AND METHOD FOR MANUFACTURING TRANSFER MASK

摘要

Provided is a mask blank (1) wherein a light shielding film (12) and a resist film (14) are stacked on a light transmitting substrate (11). The etching speed of the resist film (14) in dry etching by using an etching gas including a chlorine gas is 0.5 times the etching speed of the light shielding film (12) in the dry etching or less. Thus, when a line width or the space width corresponds to design rules of approximately 65nm, even in a case where the aspect ratio is suppressed to 4 or less, preferably 3 or less, by reducing the thickness of the resist film (14) to prevent the resist pattern (140) from being destroyed when developing the resist film (14), the resist pattern (140) is not etched and functions as a mask until etching of the light shielding film (12) is completed.