发明名称 MRAM AND ITS OPERATION METHOD
摘要 <p>An operation method for a MRAM, in which data are written using a toggle write mode, is disclosed. The method comprises the steps of: (A) reading read data from a data cell (17) using a reference signal generated using a reference cell; (B) detecting an error in the read data; (C) correcting the data stored in the data cell if an error is detected in the read data; (D) reading first reread data from the data cell after the step (C) if an error is detected in the read data; (E) detecting an error in the first reread data; (F) correcting the data stored in the reference cell if an error is detected in the first reread data; (G) reading second reread data from the data cell after the step (F) if an error is detected in the first reread data; (H) detecting an error in the second reread data; and (I) recorrecting the data stored in the data cell if an error is detected in the second reread data.</p>
申请公布号 WO2007046349(A1) 申请公布日期 2007.04.26
申请号 WO2006JP320609 申请日期 2006.10.17
申请人 NEC CORPORATION;SAKIMURA, NOBORU;HONDA, TAKESHI;SUGIBAYASHI, TADAHIKO 发明人 SAKIMURA, NOBORU;HONDA, TAKESHI;SUGIBAYASHI, TADAHIKO
分类号 G11C29/42;G11C11/15;H01L21/8246;H01L27/105;H01L43/08 主分类号 G11C29/42
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