THIN FILM TRANSISTOR AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE

摘要

PROBLEM TO BE SOLVED: To restrict an occurrence of an optical current due to outer light, and also to reduce variations of a characteristic (for example, a threshold value) of a thin film transistor. SOLUTION: An active layer 2 (semiconductor layer) is formed by poly-crystalizing amorphous silicon on an insulating substrate 1 by laser annealing, and a drain region 2d and a source region 2s are formed so as to face each other in the active layer 2. The drain region 2d and the source region 2s have a structure that an n--layer is adjacent to an n+-layer, respectively. A p-type channel region 2c is formed between the n--layer of the drain region 2d and the n--layer of the source region 2s. A shading layer 3d is formed so as to coat only a boundary region of the n--layer of the drain region 2d and the channel region 2c, for shading the outer light incident on the boundary region through the insulating substrate 1. COPYRIGHT: (C)2007,JPO&INPIT