Method for manufacturing p-type group iii nitride semiconductor, and group iii nitride semiconductor light-emitting device

摘要

An object of the present invention is to provide an efficient method for manufacturing a p-type group III nitride semiconductor that has adequate carrier concentration and a surface with a low occurrence of crystal damage. The inventive method for manufacturing a p-type group III nitride semiconductor comprises: (a) growing a group III nitride semiconductor containing a p-type dopant at 1000° C. or higher in an atmosphere containing H₂ gas and/or NH₃ gas; and (b) after the growth of the group III nitride semiconductor, substituting the H₂ gas and NH₃ gas with an inert gas at a temperature higher than 800° C. while reducing the temperature.