发明名称 MICROLITHOGRAPHY PROJECTION OBJECTIVE WITH CRYSTAL LENS
摘要 Very high aperture microlithography projection objectives operating at the wavelengths of 248 nm, 193 nm and also 157 nm, suitable for optical immersion or near-field operation with aperture values that can exceed 1.4 are made feasible with crystalline lenses and crystalline end plates P of NaCl, KCl, KI, RbI, CsI, and MgO, YAG with refractive indices up to and above 2.0. These crystalline lenses and end plates are placed between the system aperture stop AS and the wafer W, preferably as the last lenses on the image side of the objective.
申请公布号 US2007091451(A1) 申请公布日期 2007.04.26
申请号 US20040596626 申请日期 2004.12.15
申请人 SCHUSTER KARL-HEINZ 发明人 SCHUSTER KARL-HEINZ
分类号 G02B3/00;G02B9/00;G02B13/14;G02B19/00;G03F7/20 主分类号 G02B3/00
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