| 发明名称 |
Sputtering target, transparent conductive oxide, and process for producing the sputtering target |
| 摘要 |
In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In/(In+Zn) is set to a value 2 O 3 (ZnO) m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set
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| 申请公布号 |
EP1777321(A1) |
申请公布日期 |
2007.04.25 |
| 申请号 |
EP20060122640 |
申请日期 |
2000.11.22 |
| 申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
INOUE, KAZUYOSHI;SHIBUYA, TADAO;KAIJO, AKIRA |
| 分类号 |
C23C14/34;C03C17/245;C04B35/00;C04B35/01;C04B35/453;C04B35/457;C04B35/645;C23C14/08;G02F1/1343 |
主分类号 |
C23C14/34 |
| 代理机构 |
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