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发明名称
HIGH-ELECTRON-MOBILITY TRANSISTOR, FIELD-EFFECT TRANSISTOR, EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING GROUP III NITRIDE TRANSISTOR
摘要
申请公布号
EP1777737(A1)
申请公布日期
2007.04.25
申请号
EP20060728605
申请日期
2006.03.03
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人
HASHIMOTO, SHIN;KIYAMA, MAKOTO;SAKURADA, TAKASHI;TANABE, TATSUYA;MIURA, KOUHEI;MIYAZAKI, TOMIHITO
分类号
H01L21/338;H01L21/205;H01L29/778;H01L29/812
主分类号
H01L21/338
代理机构
代理人
主权项
地址
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