| 摘要 |
An embodiment relates to a light emitting device, a method for manufacturing a light emitting device, a light emitting device package and a lighting system. An ultraviolet light emitting device according to an embodiment includes a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode on the first conductivity type semiconductor layer, and a second electrode on the second conductivity type semiconductor layer. The second electrode is a carbon nanotube. So, the luminous efficiency of the light emitting device can be improved. |
