METHOD AND SYSTEM FOR PROGRAMMING MAGNETIC JUNCTIONS UTILIZING HIGH FREQUENCY MAGNETIC OSCILLATIONS

摘要

A magnetic memory and methods for providing and programming the magnetic memory are described. The memory includes storage cells, magnetic oscillator(s) and bit lines. Each storage cell includes magnetic junction(s) having a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a first magnetic anisotropy at room temperature and a second magnetic anisotropy at a minimum switching temperature due to at least the write current. The second magnetic anisotropy is not more than ninety percent of the first magnetic anisotropy. The first and second magnetic anisotropies correspond to first and second ferromagnetic resonance (FMR) frequencies. The magnetic oscillator(s) have a frequency range. The first FMR frequency is outside of the frequency range. The second FMR frequency is within the frequency range.

主权项

1. A magnetic memory comprising:
a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a free layer, a nonmagnetic spacer layer and a reference layer, the nonmagnetic spacer layer residing between reference layer and the free layer, the at least one magnetic junction being configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the free layer having a first magnetic anisotropy at room temperature and a second magnetic anisotropy at a minimum switching temperature due to at least the write current, the second magnetic anisotropy being not more than ninety percent of the first magnetic anisotropy, the first magnetic anisotropy corresponding to a first ferromagnetic resonance (FMR) frequency, the second magnetic anisotropy corresponding to a second FMR frequency; at least one magnetic oscillator having a characteristic frequency range, the first FMR frequency being outside of the characteristic frequency range, the second FMR frequency being within the characteristic frequency range; and a plurality of bit lines coupled with the plurality of magnetic storage cells.