发明名称 Insulating film and electronic device
摘要 An insulating film includes a first barrier layer, a well layer provided on the first barrier layer, a second barrier layer provided on the well layer. The first barrier layer consists of a material having a first bandgap and a first relative permittivity. The well layer consists of a material having a second bandgap smaller than the first bandgap and having a second relative permittivity larger than first relative permittivity. The second barrier layer consists of a material having a third bandgap larger than the second bandgap and having a third relative perminivity smaller than second relative permittivity. Each of the first and second barrier layers has a thickness not smaller than 2.5 angstroms, and 2.5>(d 1/epsilon1 +d 2/epsilon2 ) is satisfied where d 1 and d 2 (angstrom) are the thicknesses of the first and second barrier layers, respectively, epsilon 1 is the first relative permittivity, and epsilon 2 is the third permittivity.
申请公布号 US7208802(B2) 申请公布日期 2007.04.24
申请号 US20060347318 申请日期 2006.02.06
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIMIZU TATSUO;SATAKE HIDEKI
分类号 H01L27/04;H01L29/76;H01L21/02;H01L21/28;H01L21/314;H01L21/316;H01L21/822;H01L29/12;H01L29/15;H01L29/51;H01L29/78;H01L29/786;H01L29/94;H01L31/062;H01L31/113;H01L31/119 主分类号 H01L27/04
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