| 发明名称 |
Integrated circuit metal silicide method |
| 摘要 |
Fluorine containing regions ( 70 ) are formed in the source and drain regions ( 60 ) of the MOS transistor. A metal layer ( 90 ) is formed over the fluorine containing regions ( 70 ) and the source and drain regions ( 60 ). The metal layer is reacted with the underlying fluorine containing regions to form a metal silicide.
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| 申请公布号 |
US7208409(B2) |
申请公布日期 |
2007.04.24 |
| 申请号 |
US20050073982 |
申请日期 |
2005.03.07 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LU JIONG-PING;YUE DUOFENG;LIU XIAOZHAN;MILES DONALD S.;ROBERTSON LANCE S. |
| 分类号 |
H01L21/44;H01L21/265;H01L21/285;H01L21/336;H01L21/4763;H01L21/8234;H01L29/78 |
主分类号 |
H01L21/44 |
| 代理机构 |
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