发明名称 Fluxgate sensor integrated in a semiconductor substrate and method for manufacturing the same
摘要 In a fluxgate sensor integrated in a semiconductor substrate and a method for manufacturing the same, the fluxgate sensor includes a soft magnetic core formed on the semiconductor substrate, an excitation coil winding the soft magnetic core and being insulated by first and second insulating layers deposited above and below the soft magnetic core, respectively, and a pick-up coil, winding the soft magnetic core and being insulated by third and fourth insulating layers deposited above and below the excitation coil, respectively.
申请公布号 US7208947(B2) 申请公布日期 2007.04.24
申请号 US20040763394 申请日期 2004.01.26
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK HAE-SEOK;SHIM DONG-SIK;CHOI SANG-ON;NA KYUNG-WON
分类号 G01R33/02;G01R33/04;G01R33/05;H01L43/02 主分类号 G01R33/02
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