发明名称 |
Method for forming transparent thin film, transparent thin film formed by the method, and transparent substrate with transparent thin film |
摘要 |
The present invention provides a method for forming a transparent thin film by a chemical vapor deposition method using a gaseous raw material. In the method, a film growth rate is at least 8 nm/s, and the transparent thin film contains at least one selected from carbon (C) and oxygen (O), nitrogen (N), hydrogen (H), and silicon (Si). According to this method, a transparent thin film that does not peel off a substrate easily due to the eased tension in the thin film and has high transmittance in the visible light region can be deposited on a glass ribbon in a float bath.
|
申请公布号 |
US7208235(B2) |
申请公布日期 |
2007.04.24 |
申请号 |
US20040503022 |
申请日期 |
2004.07.28 |
申请人 |
NIPPON SHEET GLASS COMPANY, LIMITED |
发明人 |
OTANI TSUYOSHI;HIRATA MASAHIRO |
分类号 |
B32B17/06;C03C17/22;C03C17/245;C03C17/34 |
主分类号 |
B32B17/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|