| 发明名称 |
Method for forming metal oxide film and method for forming secondary electron emission film in gas discharge tube |
| 摘要 |
According to the present invention, there is provided a method for forming a metal oxide film comprising, when a metal oxide film is formed by conducting a thermal treatment on a coating film containing an organic metal compound formed on an inner wall of a tube, performing an ultraviolet irradiation treatment or an ozone treatment on the coating film prior to or simultaneously with the thermal treatment. |
| 申请公布号 |
US7208203(B2) |
申请公布日期 |
2007.04.24 |
| 申请号 |
US20030642271 |
申请日期 |
2003.08.18 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
YAMADA HITOSHI;TOKAI AKIRA;ISHIMOTO MANABU;NAKAZAWA AKIRA;AWAMOTO KENJI;SHINODA TSUTAE |
| 分类号 |
B05D7/22;H01J9/02;B05D3/02;B05D3/06;B05D3/10;B05D5/12;C03C17/25;C23C18/06;C23C18/12;C23C18/14;H01J1/70;H01J9/20;H01J11/00;H01J11/02;H01J11/18;H01J11/22;H01J11/34;H01J11/40 |
主分类号 |
B05D7/22 |
| 代理机构 |
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代理人 |
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